Effects of Gate-Length Scaling on Microwave MOSFET Performance
AbstractThis paper focuses on the extraction of an accurate small-signal equivalent circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs). An analytical modeling approach was developed and successfully validated through the comparison between measured and simulated scattering parameters. The extraction of the equivalent circuit elements allowed for the estimation of the intrinsic unity current-gain cutoff frequency, which is a crucial figure of merit for assessing the high-frequency performance. The experimental data show that the cutoff frequency of the tested devices exhibits a nearly ideal scaling behavior with decreasing gate length. View Full-Text
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Crupi, G.; Schreurs, D.M.-P.; Caddemi, A. Effects of Gate-Length Scaling on Microwave MOSFET Performance. Electronics 2017, 6, 62.
Crupi G, Schreurs DM-P, Caddemi A. Effects of Gate-Length Scaling on Microwave MOSFET Performance. Electronics. 2017; 6(3):62.Chicago/Turabian Style
Crupi, Giovanni; Schreurs, Dominique M.-P.; Caddemi, Alina. 2017. "Effects of Gate-Length Scaling on Microwave MOSFET Performance." Electronics 6, no. 3: 62.
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