Electrical Compact Modeling of Graphene Base Transistors
AbstractFollowing the recent development of the Graphene Base Transistor (GBT), a new electrical compact model for GBT devices is proposed. The transistor model includes the quantum capacitance model to obtain a self-consistent base potential. It also uses a versatile transfer current equation to be compatible with the different possible GBT configurations and it account for high injection conditions thanks to a transit time based charge model. Finally, the developed large signal model has been implemented in Verilog-A code and can be used for simulation in a standard circuit design environment such as Cadence or ADS. This model has been verified using advanced numerical simulation. View Full-Text
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Frégonèse, S.; Venica, S.; Driussi, F.; Zimmer, T. Electrical Compact Modeling of Graphene Base Transistors. Electronics 2015, 4, 969-978.
Frégonèse S, Venica S, Driussi F, Zimmer T. Electrical Compact Modeling of Graphene Base Transistors. Electronics. 2015; 4(4):969-978.Chicago/Turabian Style
Frégonèse, Sébastien; Venica, Stefano; Driussi, Francesco; Zimmer, Thomas. 2015. "Electrical Compact Modeling of Graphene Base Transistors." Electronics 4, no. 4: 969-978.