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Electronics 2014, 3(2), 303-313; doi:10.3390/electronics3020303
Article

Strong Coupling between Plasmons and Organic Semiconductors

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Received: 17 February 2014; in revised form: 10 April 2014 / Accepted: 16 April 2014 / Published: 6 May 2014
(This article belongs to the Special Issue Organic Semiconductors)
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Abstract: In this paper we describe the properties of organic material in strong coupling with plasmon, mainly based on our work in this field of research. The strong coupling modifies the optical transitions of the structure, and occurs when the interaction between molecules and plasmon prevails on the damping of the system. We describe the dispersion relation of different plasmonic systems, delocalized and localized plasmon, coupled to aggregated dyes and the typical properties of these systems in strong coupling. The modification of the dye emission is also studied. In the second part, the effect of the microscopic structure of the organics, which can be seen as a disordered film, is described. As the different molecules couple to the same plasmon mode, an extended coherent state on several microns is observed.
Keywords: plasmonics; organic semiconductors; strong coupling plasmonics; organic semiconductors; strong coupling
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Bellessa, J.; Symonds, C.; Laverdant, J.; Benoit, J.-M.; Plenet, J.C.; Vignoli, S. Strong Coupling between Plasmons and Organic Semiconductors. Electronics 2014, 3, 303-313.

AMA Style

Bellessa J, Symonds C, Laverdant J, Benoit J-M, Plenet JC, Vignoli S. Strong Coupling between Plasmons and Organic Semiconductors. Electronics. 2014; 3(2):303-313.

Chicago/Turabian Style

Bellessa, Joel; Symonds, Clementine; Laverdant, Julien; Benoit, Jean-Michel; Plenet, Jean Claude; Vignoli, Stephane. 2014. "Strong Coupling between Plasmons and Organic Semiconductors." Electronics 3, no. 2: 303-313.

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