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J. Low Power Electron. Appl. 2018, 8(3), 23; https://doi.org/10.3390/jlpea8030023

Efficient 3D-TLM Modeling and Simulation for the Thermal Management of Microwave AlGaN/GaN HEMT Used in High Power Amplifiers SSPA

1
Space instrumentation Research Department - Algerian Space Agency - Satellite Development Centre, BP 4065 Ibn Rochd USTO (CDS), Oran 31000, Algeria
2
ECP3M Laboratory Electrical Engineering, Department of Sciences and Technology University of Mostaganem, Mostaganem 27000, Algeria
3
Department of Electronics Engineering, University of Sciences and Technology of Oran Algeria, BP 1505 El M’naeour, Bir El Djir 31000, Algeria
*
Author to whom correspondence should be addressed.
Received: 27 April 2018 / Revised: 12 June 2018 / Accepted: 20 June 2018 / Published: 23 June 2018
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Abstract

A three-dimensional thermal simulation investigation for the thermal management of GaN-on-SiC monolithic microwave integrated circuits (MMICs) of consisting multi-fingers (HEMTs) is presented. The purpose of this work is to demonstrate the utility and efficiency of the three-dimensional Transmission Line Matrix method (3D-TLM) in a thermal analysis of high power AlGaN/GaN heterostructures single gate and multi-fingers HEMT SSPA (solid state power amplifiers). The self-heating effects induce thermal cross-talk between individual fingers in multi-finger AlGaN/GaN that affect device performance and reliability. Gate-finger temperature differences only arise after a transient state, due to the beginning of thermal crosstalk which is attributed to the finite rate of heat diffusion between gate fingers. The TLM method accounts for the real geometrical structure and the non-linear thermal conductivities of GaN and SiC in order to improve the realistic calculations accuracy heat dissipation and thermal behavior of the device. In addition, two types of heat sources located on the top of GaN layer are considered in thermal simulations: Nano-scale hotspot as a pulsed wave heat source under gate and micro-scale hotspot as a continuous wave heat source, between gate and drain. Heat diffusion however, occurs not only between individual gate fingers (inter-finger) in a multi-finger HEMT, but also within each gate finger (intra-finger). To compare results, a Micro-Raman Spectroscopy experience is conducted to obtain a detailed and accurate temperature distribution. Good agreement between the microscopic spectral measurement and TLM simulation results is observed by accepting an error less than 2.2% relative to a maximum temperature. Results show that the 3D-TLM method is suitable for understanding heat management in particular for microwave devices AlGaN/GaN HEMTs SSPA amplifier. TLM method helps to select and locates the expected hot spots and to highlight the need of thermal study pre-design in order to minimize the system-level thermal dissipation and lead therefore to higher reliability. View Full-Text
Keywords: AlGaN/GaN HEMTs; SSPA; heat transfer; self-heating; 3D TLM method; Nano-scale hot spots; Raman spectroscopy AlGaN/GaN HEMTs; SSPA; heat transfer; self-heating; 3D TLM method; Nano-scale hot spots; Raman spectroscopy
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Belkacemi, K.; Hocine, R. Efficient 3D-TLM Modeling and Simulation for the Thermal Management of Microwave AlGaN/GaN HEMT Used in High Power Amplifiers SSPA. J. Low Power Electron. Appl. 2018, 8, 23.

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