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J. Low Power Electron. Appl. 2017, 7(3), 20; doi:10.3390/jlpea7030020

Ultra-Low Power Consuming Direct Radiation Sensors Based on Floating Gate Structures

TowerJazz, 2310520 Migdal HaEmek, Israel
Technion-Israel Institute of Technology, Technion City, 32000 Haifa, Israel
Author to whom correspondence should be addressed.
Received: 21 June 2017 / Revised: 23 July 2017 / Accepted: 28 July 2017 / Published: 31 July 2017
(This article belongs to the Special Issue Design Methodologies for Power Reduction in Consumer Electronics)


In this paper, we report on ultra-low power consuming single poly floating gate direct radiation sensors. The developed devices are intended for total ionizing dose (TID) measurements and fabricated in a standard CMOS process flow. Sensor design and operation is discussed in detail. Original array sensors were suggested and fabricated that allowed high statistical significance of the radiation measurements and radiation imaging functions. Single sensors and array sensors were analyzed in combination with the specially developed test structures. This allowed insight into the physics of sensor operations and exclusion of the phenomena related to material degradation under irradiation in the interpretation of the measurement results. Response of the developed sensors to various sources of ionizing radiation (Gamma, X-ray, UV, energetic ions) was investigated. The optimal design of sensor for implementation in dosimetry systems was suggested. The roadmap for future improvement of sensor performance is suggested. View Full-Text
Keywords: radiation sensor; floating gate; CMOS; semiconductor; energetic ions; Gamma; X-ray; UV radiation sensor; floating gate; CMOS; semiconductor; energetic ions; Gamma; X-ray; UV

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Pikhay, E.; Roizin, Y.; Nemirovsky, Y. Ultra-Low Power Consuming Direct Radiation Sensors Based on Floating Gate Structures. J. Low Power Electron. Appl. 2017, 7, 20.

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J. Low Power Electron. Appl. EISSN 2079-9268 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
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