InGaAs-OI Substrate Fabrication on a 300 mm Wafer†
AbstractIn this work, we demonstrate for the first time a 300-mm indium–gallium–arsenic (InGaAs) wafer on insulator (InGaAs-OI) substrates by splitting in an InP sacrificial layer. A 30-nm-thick InGaAs layer was successfully transferred using low temperature direct wafer bonding (DWB) and Smart CutTM technology. Three key process steps of the integration were therefore specifically developed and optimized. The first one was the epitaxial growing process, designed to reduce the surface roughness of the InGaAs film. Second, direct wafer bonding conditions were investigated and optimized to achieve non-defective bonding up to 600 °C. Finally, we adapted the splitting condition to detach the InGaAs layer according to epitaxial stack specifications. The paper presents the overall process flow that achieved InGaAs-OI, the required optimization, and the associated characterizations, namely atomic force microscopy (AFM), scanning acoustic microscopy (SAM), and HR-XRD, to insure the crystalline quality of the post transferred layer. View Full-Text
Scifeed alert for new publicationsNever miss any articles matching your research from any publisher
- Get alerts for new papers matching your research
- Find out the new papers from selected authors
- Updated daily for 49'000+ journals and 6000+ publishers
- Define your Scifeed now
Sollier, S.; Widiez, J.; Gaudin, G.; Mazen, F.; Baron, T.; Martin, M.; Roure, M.-C.; Besson, P.; Morales, C.; Beche, E.; Fournel, F.; Favier, S.; Salaun, A.; Gergaud, P.; Cordeau, M.; Veytizou, C.; Ecarnot, L.; Delprat, D.; Radu, I.; Signamarcheix, T. InGaAs-OI Substrate Fabrication on a 300 mm Wafer. J. Low Power Electron. Appl. 2016, 6, 19.
Sollier S, Widiez J, Gaudin G, Mazen F, Baron T, Martin M, Roure M-C, Besson P, Morales C, Beche E, Fournel F, Favier S, Salaun A, Gergaud P, Cordeau M, Veytizou C, Ecarnot L, Delprat D, Radu I, Signamarcheix T. InGaAs-OI Substrate Fabrication on a 300 mm Wafer. Journal of Low Power Electronics and Applications. 2016; 6(4):19.Chicago/Turabian Style
Sollier, Sebastien; Widiez, Julie; Gaudin, Gweltaz; Mazen, Frederic; Baron, Thierry; Martin, Mickail; Roure, Marie-Christine; Besson, Pascal; Morales, Christophe; Beche, Elodie; Fournel, Frank; Favier, Sylvie; Salaun, Amelie; Gergaud, Patrice; Cordeau, Maryline; Veytizou, Christellle; Ecarnot, Ludovic; Delprat, Daniel; Radu, Ionut; Signamarcheix, Thomas. 2016. "InGaAs-OI Substrate Fabrication on a 300 mm Wafer." J. Low Power Electron. Appl. 6, no. 4: 19.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.