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J. Low Power Electron. Appl. 2016, 6(4), 19; doi:10.3390/jlpea6040019

InGaAs-OI Substrate Fabrication on a 300 mm Wafer

1
University Grenoble Alpes, F-38000 Grenoble, France
2
CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
3
SOITEC Parc Technologique des Fontaines, 38190 Bernin, France
4
University Grenoble Alpes, CNRS, LTM, F-38000 Grenoble, France
This paper is an extended version of the paper: Sollier, S., et al. 300 mm InGaAsOI substrate fabrication using the Smart CutTM technology. In Proceedings of the 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Rohnert Park, CA, USA, 5–8 October 2015.[...]
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Author to whom correspondence should be addressed.
Academic Editors: David Bol, Steven A. Vitale and Alexander Fish
Received: 29 April 2016 / Revised: 29 June 2016 / Accepted: 19 September 2016 / Published: 30 September 2016
(This article belongs to the Special Issue Selected Papers from IEEE S3S Conference 2015)
View Full-Text   |   Download PDF [995 KB, uploaded 30 September 2016]   |  

Abstract

In this work, we demonstrate for the first time a 300-mm indium–gallium–arsenic (InGaAs) wafer on insulator (InGaAs-OI) substrates by splitting in an InP sacrificial layer. A 30-nm-thick InGaAs layer was successfully transferred using low temperature direct wafer bonding (DWB) and Smart CutTM technology. Three key process steps of the integration were therefore specifically developed and optimized. The first one was the epitaxial growing process, designed to reduce the surface roughness of the InGaAs film. Second, direct wafer bonding conditions were investigated and optimized to achieve non-defective bonding up to 600 °C. Finally, we adapted the splitting condition to detach the InGaAs layer according to epitaxial stack specifications. The paper presents the overall process flow that achieved InGaAs-OI, the required optimization, and the associated characterizations, namely atomic force microscopy (AFM), scanning acoustic microscopy (SAM), and HR-XRD, to insure the crystalline quality of the post transferred layer. View Full-Text
Keywords: InGaAs; Smart CutTM; direct bonding; thin layer transfer; Al2O3 InGaAs; Smart CutTM; direct bonding; thin layer transfer; Al2O3
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Sollier, S.; Widiez, J.; Gaudin, G.; Mazen, F.; Baron, T.; Martin, M.; Roure, M.-C.; Besson, P.; Morales, C.; Beche, E.; Fournel, F.; Favier, S.; Salaun, A.; Gergaud, P.; Cordeau, M.; Veytizou, C.; Ecarnot, L.; Delprat, D.; Radu, I.; Signamarcheix, T. InGaAs-OI Substrate Fabrication on a 300 mm Wafer. J. Low Power Electron. Appl. 2016, 6, 19.

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