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Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime†
AbstractThe global variability of ultra-thin body and buried oxide (UTBB) MOSFETs in subthreshold and off regimes of operation is analyzed. The variability of the off-state drain current, subthreshold slope, drain-induced barrier lowering (DIBL), gate leakage current, threshold voltage and their correlations are considered. Two threshold voltage extraction techniques were used. It is shown that the transconductance over drain current (gm/Id) method is preferable for variability studies. It is demonstrated that the subthreshold drain current variability in short channel devices cannot be described by threshold voltage variability. It is suggested to include the effective body factor incorporating short channel effects in order to properly model the subthreshold drain current variability.
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Makovejev, S.; Esfeh, B.K.; Andrieu, F.; Raskin, J.-P.; Flandre, D.; Kilchytska, V. Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime. J. Low Power Electron. Appl. 2014, 4, 201-213.View more citation formats
Makovejev S, Esfeh BK, Andrieu F, Raskin J-P, Flandre D, Kilchytska V. Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime. Journal of Low Power Electronics and Applications. 2014; 4(3):201-213.Chicago/Turabian Style
Makovejev, Sergej; Esfeh, Babak K.; Andrieu, François; Raskin, Jean-Pierre; Flandre, Denis; Kilchytska, Valeriya. 2014. "Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime." J. Low Power Electron. Appl. 4, no. 3: 201-213.
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