This is a correction to J. Low Power Electron. Appl. 2012, 2(2), 168-179.

J. Low Power Electron. Appl. 2012, 2(4), 210; doi:10.3390/jlpea2040210
Correction

Heavy Ion Characterization of a Radiation Hardened Flip-Flop Optimized for Subthreshold Operation. J. Low Power Electron. Appl. 2012, 2, 168-179

1email, 1email, 1,* email, 2email and 2email
Received: 25 September 2012; Accepted: 25 September 2012 / Published: 26 September 2012
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Note: In lieu of an abstract, this is an excerpt from the first page.

Excerpt: We have found the following error in the title of this article which was recently published in J. Low Power Electron. Appl. [...]
PDF Full-text Download PDF Full-Text [16 KB, uploaded 26 September 2012 15:26 CEST]

Export to BibTeX |
EndNote


MDPI and ACS Style

Chavan, A.; Palakurthi, P.; MacDonald, E.; Neff, J.; Bozeman, E. Heavy Ion Characterization of a Radiation Hardened Flip-Flop Optimized for Subthreshold Operation. J. Low Power Electron. Appl. 2012, 2, 168-179. J. Low Power Electron. Appl. 2012, 2, 210.

AMA Style

Chavan A, Palakurthi P, MacDonald E, Neff J, Bozeman E. Heavy Ion Characterization of a Radiation Hardened Flip-Flop Optimized for Subthreshold Operation. J. Low Power Electron. Appl. 2012, 2, 168-179. Journal of Low Power Electronics and Applications. 2012; 2(4):210.

Chicago/Turabian Style

Chavan, Ameet; Palakurthi, Praveen; MacDonald, Eric; Neff, Joseph; Bozeman, Eric. 2012. "Heavy Ion Characterization of a Radiation Hardened Flip-Flop Optimized for Subthreshold Operation. J. Low Power Electron. Appl. 2012, 2, 168-179." J. Low Power Electron. Appl. 2, no. 4: 210.

J. Low Power Electron. Appl. EISSN 2079-9268 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert