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This is a correction to J. Low Power Electron. Appl. 2012, 2(2), 168-179.

J. Low Power Electron. Appl. 2012, 2(4), 210; doi:10.3390/jlpea2040210
Correction

Heavy Ion Characterization of a Radiation Hardened Flip-Flop Optimized for Subthreshold Operation. J. Low Power Electron. Appl. 2012, 2, 168-179

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Received: 25 September 2012; Accepted: 25 September 2012 / Published: 26 September 2012
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Excerpt: We have found the following error in the title of this article which was recently published in J. Low Power Electron. Appl. [...]
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Chavan, A.; Palakurthi, P.; MacDonald, E.; Neff, J.; Bozeman, E. Heavy Ion Characterization of a Radiation Hardened Flip-Flop Optimized for Subthreshold Operation. J. Low Power Electron. Appl. 2012, 2, 168-179. J. Low Power Electron. Appl. 2012, 2, 210.

AMA Style

Chavan A, Palakurthi P, MacDonald E, Neff J, Bozeman E. Heavy Ion Characterization of a Radiation Hardened Flip-Flop Optimized for Subthreshold Operation. J. Low Power Electron. Appl. 2012, 2, 168-179. Journal of Low Power Electronics and Applications. 2012; 2(4):210.

Chicago/Turabian Style

Chavan, Ameet; Palakurthi, Praveen; MacDonald, Eric; Neff, Joseph; Bozeman, Eric. 2012. "Heavy Ion Characterization of a Radiation Hardened Flip-Flop Optimized for Subthreshold Operation. J. Low Power Electron. Appl. 2012, 2, 168-179." J. Low Power Electron. Appl. 2, no. 4: 210.

J. Low Power Electron. Appl. EISSN 2079-9268 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert