J. Low Power Electron. Appl. 2012, 2(4), 210; doi:10.3390/jlpea2040210
Correction

Heavy Ion Characterization of a Radiation Hardened Flip-Flop Optimized for Subthreshold Operation. J. Low Power Electron. Appl. 2012, 2, 168-179

Ameet Chavan 1 email, Praveen Palakurthi 1 email, Eric MacDonald 1,* email, Joseph Neff 2 email and Eric Bozeman 2 email
1 University of Texas at El Paso, Electrical and Computer Engineering, El Paso, TX 79968, USA 2 SPAWAR System Center, Navy, San Diego, CA 92152, USA
* Author to whom correspondence should be addressed.
Received: 25 September 2012 / Accepted: 25 September 2012 / Published: 26 September 2012
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Abstract: We have found the following error in the title of this article which was recently published in J. Low Power Electron. Appl. [...]

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Cite This Article

MDPI and ACS Style

Chavan, A.; Palakurthi, P.; MacDonald, E.; Neff, J.; Bozeman, E. Heavy Ion Characterization of a Radiation Hardened Flip-Flop Optimized for Subthreshold Operation. J. Low Power Electron. Appl. 2012, 2, 168-179. J. Low Power Electron. Appl. 2012, 2, 210.

AMA Style

Chavan A, Palakurthi P, MacDonald E, Neff J, Bozeman E. Heavy Ion Characterization of a Radiation Hardened Flip-Flop Optimized for Subthreshold Operation. J. Low Power Electron. Appl. 2012, 2, 168-179. Journal of Low Power Electronics and Applications. 2012; 2(4):210.

Chicago/Turabian Style

Chavan, Ameet; Palakurthi, Praveen; MacDonald, Eric; Neff, Joseph; Bozeman, Eric. 2012. "Heavy Ion Characterization of a Radiation Hardened Flip-Flop Optimized for Subthreshold Operation. J. Low Power Electron. Appl. 2012, 2, 168-179." J. Low Power Electron. Appl. 2, no. 4: 210.

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