Open AccessThis article is
- freely available
Using a Voltage Domain Programmable Technique for Low-Power Management Cell-Based Design
Department of Electrical Engineering, Feng-Chia University, 100 Wen-Hwa Road, Sea-Twen, TaiChung 40724, Taiwan
Received: 16 May 2011; in revised form: 22 August 2011 / Accepted: 5 September 2011 / Published: 14 September 2011
Abstract: The Multi-voltage technique is an effective way to reduce power consumption. In the proposed cell-based voltage domain programmable (VDP) technique, the high and low voltages applied to logic gates are programmable. The flexible voltage domain reassignment allows the chip performance and power consumption to be dynamically adjusted. In the proposed technique, the power switches possess the feature of flexible programming after chip manufacturing. This VDP method does not use an external voltage regulator to regulate the supply voltage level from outside of the chip but can be easily integrated within the design. This novel technique is proven by use of a video decoder test chip, which shows 55% and 61% power reductions compared to conventional single-Vdd and low-voltage designs, respectively. This power-aware performance adjusting mechanism shows great power reduction with a good power-performance management mechanism.
Keywords: power management; voltage domain programmable; multiple-voltage; low-voltage
Article StatisticsClick here to load and display the download statistics.
Notes: Multiple requests from the same IP address are counted as one view.
Cite This Article
MDPI and ACS Style
Cheng, C.-H. Using a Voltage Domain Programmable Technique for Low-Power Management Cell-Based Design. J. Low Power Electron. Appl. 2011, 1, 303-326.
Cheng C-H. Using a Voltage Domain Programmable Technique for Low-Power Management Cell-Based Design. Journal of Low Power Electronics and Applications. 2011; 1(2):303-326.
Cheng, Ching-Hwa. 2011. "Using a Voltage Domain Programmable Technique for Low-Power Management Cell-Based Design." J. Low Power Electron. Appl. 1, no. 2: 303-326.