Photovoltaic Effect in Graphene/MoS2/Si Van der Waals Heterostructures
AbstractThis paper presents a study on the photovoltaic effect of a graphene/MoS2/Si double heterostructure, grown by rapid chemical vapor deposition. It was found that the double junctions of the graphene/MoS2 Schottky junction and the MoS2/Si heterostructure played important roles in enhancing the device’s performance. They allowed more electron-hole pairs to be efficiently generated, separated, and collected in the graphene/MoS2/Si double interface. The device demonstrated an open circuit voltage of 0.51 V and an energy conversion efficiency of 2.58% under an optical illumination of 500 mW/cm2. The photovoltaic effect of the device was partly attributed to the strong light absorption and photoresponse of the few-layer MoS2 film, and partly ascribed to the high carrier-collection-rate of the double van der Waals heterostructures (vdWHs) in the device. View Full-Text
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Shi, W.; Ma, X. Photovoltaic Effect in Graphene/MoS2/Si Van der Waals Heterostructures. Coatings 2018, 8, 2.
Shi W, Ma X. Photovoltaic Effect in Graphene/MoS2/Si Van der Waals Heterostructures. Coatings. 2018; 8(1):2.Chicago/Turabian Style
Shi, Weilin; Ma, Xiying. 2018. "Photovoltaic Effect in Graphene/MoS2/Si Van der Waals Heterostructures." Coatings 8, no. 1: 2.