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Coatings 2017, 7(9), 148; https://doi.org/10.3390/coatings7090148

Deposition and Patterning of Polycrystalline Diamond Films Using Traditional Photolithography and Reactive Ion Etching

High Technology Physics Research Institute, Tomsk Polytechnic University, Tomsk 634050, Russia
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Received: 31 July 2017 / Revised: 7 September 2017 / Accepted: 8 September 2017 / Published: 15 September 2017
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Abstract

Given the exceptional characteristics of diamond films, they have become increasingly popular in the fields of medicine, microelectronics, and detector electronics. However, despite all the advantages, there are many technological problems that complicate their widespread application and impose limitations on diamond use in technological processes. In this study, we proposed a new technique for obtaining a complex topology of polycrystalline diamond coatings by selective seeding of the substrate by nucleation centers and subsequent surface treatment with reactive ion etching to reduce the number of parasitic particles. As a result, diamond films were obtained with a high particle concentration in the film region and high repeatability of the pattern. Moreover, parasitic particles influenced neutralization in areas where film coverage was not needed. The effect of the diamond nanoparticle concentration in a photoresist and the effect of reactive ion etching on the formation of a continuous film and the removal of parasitic nucleation centers were examined. The relative simplicity, low power consumption, and high efficiency of this method make it attractive for both industrial and scientific applications. View Full-Text
Keywords: diamond; CVD; selective; pattern; films; deposition; parasitic particles; reactive ion etching; photolithography diamond; CVD; selective; pattern; films; deposition; parasitic particles; reactive ion etching; photolithography
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Linnik, S.; Okhotnikov, V.; Gaydaychuk, A. Deposition and Patterning of Polycrystalline Diamond Films Using Traditional Photolithography and Reactive Ion Etching. Coatings 2017, 7, 148.

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