Next Article in Journal / Special Issue
Using an Atmospheric Pressure Chemical Vapor Deposition Process for the Development of V2O5 as an Electrochromic Material
Previous Article in Journal
Interfacial Mechanics Analysis of a Brittle Coating–Ductile Substrate System Involved in Thermoelastic Contact
Previous Article in Special Issue
Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition
Article Menu
Issue 2 (February) cover image

Export Article

Open AccessArticle
Coatings 2017, 7(2), 22; doi:10.3390/coatings7020022

Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells

1
Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA 90095, USA
2
Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA
*
Author to whom correspondence should be addressed.
Academic Editor: Mingheng Li
Received: 13 December 2016 / Revised: 24 January 2017 / Accepted: 25 January 2017 / Published: 8 February 2017
(This article belongs to the Special Issue Chemical Vapor Deposition)

Abstract

This work focuses on the development of a multiscale computational fluid dynamics (CFD) simulation framework with application to plasma-enhanced chemical vapor deposition of thin film solar cells. A macroscopic, CFD model is proposed which is capable of accurately reproducing plasma chemistry and transport phenomena within a 2D axisymmetric reactor geometry. Additionally, the complex interactions that take place on the surface of a-Si:H thin films are coupled with the CFD simulation using a novel kinetic Monte Carlo scheme which describes the thin film growth, leading to a multiscale CFD model. Due to the significant computational challenges imposed by this multiscale CFD model, a parallel computation strategy is presented which allows for reduced processing time via the discretization of both the gas-phase mesh and microscopic thin film growth processes. Finally, the multiscale CFD model has been applied to the PECVD process at industrially relevant operating conditions revealing non-uniformities greater than 20% in the growth rate of amorphous silicon films across the radius of the wafer. View Full-Text
Keywords: multiscale modeling; plasma-enhanced chemical vapor deposition; computational fluid dynamics; thin film solar cells; parallel computing multiscale modeling; plasma-enhanced chemical vapor deposition; computational fluid dynamics; thin film solar cells; parallel computing
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Crose, M.; Tran, A.; Christofides, P.D. Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells. Coatings 2017, 7, 22.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Coatings EISSN 2079-6412 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top