Improved Laser Damage Threshold of In2Se3 Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser
Abstract
:1. Introduction
2. Preparation and Characterization of the In2Se3 SA
2.1. Synthesis and Characterization of In2Se3 Flakes
2.2. Preparation and Characterization of In2Se3 SA
3. Experimental Setup
4. Experimental Results and Discussions
4.1. Bright Pulses
4.2. Dark-Bright Pulse Pairs
5. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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SA | Fabrication | λc nm | fc MHz | τ ps | Pave mW | Epulse nJ | Ref. |
---|---|---|---|---|---|---|---|
Graphene | ME | 1568 | 16.34 | 0.844 | 30 | 1.84 | [35] |
Graphene | RGO | 1555 | 15.36 | 0.51 | 80 | 5.2 | [36] |
Bi2Se3 | SPE | 1562.1 | 3.54 | 25.16 ns | 10 | 2.824 | [37] |
Bi2Se3 | LPE | 1560.5 | 0.5376 | — | 33.8 | 62.87 | [17] |
Bi2Te3 | PLD | 1564.1 | 2950 | 0.92 | 45.3 | 0.01536 | [38] |
Bi2Te3 | Solvothermal | 1571 | 10.71 | 6.2 | 30 | 2.8 | [39] |
Bi2Te3 | ME | 1560 | 1.7 | 12.8 ns | 32.9 | 22.4 | [40] |
Sb2Te3 | PLD | 1530 | 94 | — | 12 | 0.127 | [41] |
WS2 | CVD | 1568.3 | 0.487 | 1.49 | 62.5 | 128.3 | [42] |
WS2 | LPE | 1531.5/1557.5 | 2.14 | 11 | 14.2 | 6.64 | [43] |
WS2 | PLD | 1561 | 101.4 | 0.246 | 18 | — | [44] |
WSe2 | CVD | 1557.4 | 63.133 | 0.1635 | 28.5 | — | [45] |
WSe2 | CVD | 1562 | 58.8 | 0.185 | 30 | — | [46] |
MoSe2 | BTS | 1557.3 | 3270 | 0.751 | 22.8 | 0.0067 | [47] |
MoTe2 | MSD | 1559 | 26.6 | 0.229 | 57 | 2.14 | [48] |
ReS2 | CVD | 1565 | 318.5 | — | 12 | 0.037 | [49] |
BP | LPE | 1559.5 | 8.77 | 0.94 | 53 | — | [22] |
In2Se3 | MSD | 1565 | 40.9 | 0.276 | 83.2 | 2.03 | [32] |
In2Se3 | PVD | 1559.7 | 1.71 | 14.4 ns | 122.4 | 5.8 | This work |
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Han, X.; Zhang, H.; Jiang, S.; Zhang, C.; Li, D.; Guo, Q.; Gao, J.; Man, B. Improved Laser Damage Threshold of In2Se3 Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser. Nanomaterials 2019, 9, 1216. https://doi.org/10.3390/nano9091216
Han X, Zhang H, Jiang S, Zhang C, Li D, Guo Q, Gao J, Man B. Improved Laser Damage Threshold of In2Se3 Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser. Nanomaterials. 2019; 9(9):1216. https://doi.org/10.3390/nano9091216
Chicago/Turabian StyleHan, Xile, Huanian Zhang, Shouzhen Jiang, Chao Zhang, Dengwang Li, Quanxin Guo, Jinjuan Gao, and Baoyuan Man. 2019. "Improved Laser Damage Threshold of In2Se3 Saturable Absorber by PVD for High-Power Mode-Locked Er-Doped Fiber Laser" Nanomaterials 9, no. 9: 1216. https://doi.org/10.3390/nano9091216