Percolated Si:SiO2 Nanocomposites: Oven- vs. Millisecond Laser-Induced Crystallization of SiOx Thin Films
Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany
Institute of Physics, Technische Universität Chemnitz, 09107 Chemnitz, Germany
Author to whom correspondence should be addressed.
Received: 1 June 2018 / Revised: 4 July 2018 / Accepted: 10 July 2018 / Published: 13 July 2018
Three-dimensional nanocomposite networks consisting of percolated Si nanowires in a SiO
, were studied. The structures were obtained by reactive ion beam sputter deposition of
(x ≈ 0.6) thin films at 450
C and subsequent crystallization using conventional oven, as well as millisecond line focus laser treatment. Rutherford backscattering spectrometry, Raman spectroscopy, X-ray diffraction, cross-sectional and energy-filtered transmission electron microscopy were applied for sample characterization. While oven treatment resulted in a mean Si wire diameter of 10 nm and a crystallinity of 72% within the Si volume, almost single-domain Si structures of 30 nm in diameter and almost free of amorphous Si were obtained by millisecond laser application. The structural differences are attributed to the different crystallization processes: conventional oven tempering proceeds via solid state and millisecond laser application via liquid phase crystallization of Si. The five orders of magnitude larger diffusion constant in the liquid phase is responsible for the three-times larger Si nanostructure diameter. In conclusion, laser treatment offers not only significantly shorter process times, but moreover, a superior structural order of nano-Si compared to conventional heating.
This is an open access article distributed under the Creative Commons Attribution License
which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
Share & Cite This Article
MDPI and ACS Style
Schumann, E.; Hübner, R.; Grenzer, J.; Gemming, S.; Krause, M. Percolated Si:SiO2 Nanocomposites: Oven- vs. Millisecond Laser-Induced Crystallization of SiOx Thin Films. Nanomaterials 2018, 8, 525.
Schumann E, Hübner R, Grenzer J, Gemming S, Krause M. Percolated Si:SiO2 Nanocomposites: Oven- vs. Millisecond Laser-Induced Crystallization of SiOx Thin Films. Nanomaterials. 2018; 8(7):525.
Schumann, Erik; Hübner, René; Grenzer, Jörg; Gemming, Sibylle; Krause, Matthias. 2018. "Percolated Si:SiO2 Nanocomposites: Oven- vs. Millisecond Laser-Induced Crystallization of SiOx Thin Films." Nanomaterials 8, no. 7: 525.
Show more citation formats
Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.
[Return to top]
For more information on the journal statistics, click here
Multiple requests from the same IP address are counted as one view.