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Nanomaterials 2018, 8(7), 512; https://doi.org/10.3390/nano8070512

Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer

1
Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China
2
School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
*
Authors to whom correspondence should be addressed.
Received: 27 May 2018 / Revised: 28 June 2018 / Accepted: 7 July 2018 / Published: 9 July 2018
(This article belongs to the Special Issue Optoelectronic Nanodevices)
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Abstract

We propose a graded indium composition p-type InGaN (p-InGaN) conduction layer to replace the p-type AlGaN electron blocking layer and a p-GaN layer in order to enhance the light output power of a GaN-based green light-emitting diode (LED). The indium composition of the p-InGaN layer decreased from 10.4% to 0% along the growth direction. The light intensity of the LED with a graded indium composition p-InGaN layer is 13.7% higher than that of conventional LEDs according to the experimental result. The calculated data further confirmed that the graded indium composition p-InGaN layer can effectively improve the light power of green LEDs. According to the simulation, the increase in light output power of green LEDs with a graded indium composition p-InGaN layer was mainly attributed to the enhancement of hole injection and the improvement of the radiative recombination rate. View Full-Text
Keywords: p-type InGaN; graded indium composition; hole injection; quantum efficiency; green LED p-type InGaN; graded indium composition; hole injection; quantum efficiency; green LED
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Zhou, Q.; Wang, H.; Xu, M.; Zhang, X.-C. Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer. Nanomaterials 2018, 8, 512.

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