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Nanomaterials 2016, 6(12), 233; doi:10.3390/nano6120233

The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities

1
National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
2
School of Electronic and Information Engineering, Yangzhou Polytechnic Institute, Yangzhou 225127, China
*
Author to whom correspondence should be addressed.
Academic Editor: Shinya Maenosono
Received: 14 October 2016 / Revised: 12 November 2016 / Accepted: 25 November 2016 / Published: 3 December 2016
(This article belongs to the Special Issue Semiconductor Nanoparticles for Electric Device Applications)
View Full-Text   |   Download PDF [2452 KB, uploaded 3 December 2016]   |  

Abstract

Nano-crystalline Si films with high conductivities are highly desired in order to develop the new generation of nano-devices. Here, we first demonstrate that the grain boundaries played an important role in the carrier transport process in un-doped nano-crystalline Si films as revealed by the temperature-dependent Hall measurements. The potential barrier height can be well estimated from the experimental results, which is in good agreement with the proposed model. Then, by introducing P and B doping, it is found that the scattering of grain boundaries can be significantly suppressed and the Hall mobility is monotonously decreased with the temperature both in P- and B-doped nano-crystalline Si films, which can be attributed to the trapping of P and B dopants in the grain boundary regions to reduce the barriers. Consequently, a room temperature conductivity as high as 1.58 × 103 S/cm and 4 × 102 S/cm is achieved for the P-doped and B-doped samples, respectively. View Full-Text
Keywords: carrier transport; doped; temperature-dependent Hall measurement carrier transport; doped; temperature-dependent Hall measurement
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Shan, D.; Qian, M.; Ji, Y.; Jiang, X.; Xu, J.; Chen, K. The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities. Nanomaterials 2016, 6, 233.

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