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Nanomaterials 2015, 5(3), 1532-1543; doi:10.3390/nano5031532

Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

1
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
2
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
3
Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China
*
Authors to whom correspondence should be addressed.
Academic Editor: Thomas Nann
Received: 5 August 2015 / Revised: 10 September 2015 / Accepted: 11 September 2015 / Published: 18 September 2015
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Abstract

Nano-textured 4H–SiC homoepitaxial layers (NSiCLs) were grown on 4H–SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of their surface morphology evolution and graphene growth. It was found that continuously distributed nano-scale patterns formed on NSiCLs which were about submicrons in-plane and about 100 nanometers out-of-plane in size. After HTTs under vacuum, pattern sizes reduced, and the sizes of the remains were inversely proportional to the treatment time. Referring to Raman spectra, the establishment of multi-layer graphene (MLG) on NSiCL surfaces was observed. MLG with sp2 disorders was obtained from NSiCLs after a high temperature treatment under vacuum at 1700 K for two hours, while MLG without sp2 disorders was obtained under Ar atmosphere at 1900 K. View Full-Text
Keywords: nano-textured; 4H–SiC; morphology; graphene; evolution nano-textured; 4H–SiC; morphology; graphene; evolution
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Liu, X.; Chen, Y.; Sun, C.; Guan, M.; Zhang, Y.; Zhang, F.; Sun, G.; Zeng, Y. Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth. Nanomaterials 2015, 5, 1532-1543.

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