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Nanomaterials 2014, 4(2), 344-354; doi:10.3390/nano4020344

Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth

1
Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742, USA
2
Laboratory for Physical Science, 8050 Greenmead Drive, College Park, MD 20740, USA
3
Department of Physics, National Chung-Cheng University, Chia-Yi 62102, Taiwan
*
Author to whom correspondence should be addressed.
Received: 18 March 2014 / Revised: 5 April 2014 / Accepted: 23 April 2014 / Published: 12 May 2014
(This article belongs to the Special Issue Self-Assembled Nanomaterials)
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Abstract

We present results demonstrating directed self-assembly of nanometer-scale mounds during molecular beam epitaxial growth on patterned GaAs (001) surfaces. The mound arrangement is tunable via the growth temperature, with an inverse spacing or spatial frequency which can exceed that of the features of the template. We find that the range of film thickness over which particular mound arrangements persist is finite, due to an evolution of the shape of the mounds which causes their growth to self-limit. A difference in the film thickness at which mounds at different sites self-limit provides a means by which different arrangements can be produced.
Keywords: directed self-assembly; self-assembly; self-limiting behavior; pattern amplification; nanostructures; growth mounds; crystal growth directed self-assembly; self-assembly; self-limiting behavior; pattern amplification; nanostructures; growth mounds; crystal growth
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Lin, C.-F.; Kan, H.-C.; Kanakaraju, S.; Richardson, C.; Phaneuf, R. Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth. Nanomaterials 2014, 4, 344-354.

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