Next Article in Journal
The Impact of Surface Ligands and Synthesis Method on the Toxicity of Glutathione-Coated Gold Nanoparticles
Next Article in Special Issue
Design of Magnetic Gelatine/Silica Nanocomposites by Nanoemulsification: Encapsulation versus in Situ Growth of Iron Oxide Colloids
Previous Article in Journal
Synthesis Characterization and Photocatalytic Studies of Cobalt Ferrite-Silica-Titania Nanocomposites
Nanomaterials 2014, 4(2), 344-354; doi:10.3390/nano4020344
Article

Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth

1,2
, 1,3
, 2
, 2
 and 1,2,*
Received: 18 March 2014; in revised form: 5 April 2014 / Accepted: 23 April 2014 / Published: 12 May 2014
(This article belongs to the Special Issue Self-Assembled Nanomaterials)
View Full-Text   |   Download PDF [690 KB, uploaded 12 May 2014]   |   Browse Figures
Abstract: We present results demonstrating directed self-assembly of nanometer-scale mounds during molecular beam epitaxial growth on patterned GaAs (001) surfaces. The mound arrangement is tunable via the growth temperature, with an inverse spacing or spatial frequency which can exceed that of the features of the template. We find that the range of film thickness over which particular mound arrangements persist is finite, due to an evolution of the shape of the mounds which causes their growth to self-limit. A difference in the film thickness at which mounds at different sites self-limit provides a means by which different arrangements can be produced.
Keywords: directed self-assembly; self-assembly; self-limiting behavior; pattern amplification; nanostructures; growth mounds; crystal growth directed self-assembly; self-assembly; self-limiting behavior; pattern amplification; nanostructures; growth mounds; crystal growth
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Export to BibTeX |
EndNote


MDPI and ACS Style

Lin, C.-F.; Kan, H.-C.; Kanakaraju, S.; Richardson, C.; Phaneuf, R. Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth. Nanomaterials 2014, 4, 344-354.

AMA Style

Lin C-F, Kan H-C, Kanakaraju S, Richardson C, Phaneuf R. Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth. Nanomaterials. 2014; 4(2):344-354.

Chicago/Turabian Style

Lin, Chuan-Fu; Kan, Hung-Chih; Kanakaraju, Subramaniam; Richardson, Christopher; Phaneuf, Raymond. 2014. "Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth." Nanomaterials 4, no. 2: 344-354.


Nanomaterials EISSN 2079-4991 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert