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Appl. Sci. 2018, 8(9), 1552; https://doi.org/10.3390/app8091552

Photonic Crystal Cavity with a Thin Low-Index Layer for Silicon-Compatible Nanolight Source

Department of Physics, Chung-Ang University, Seoul 06974, Korea
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Received: 3 August 2018 / Revised: 29 August 2018 / Accepted: 31 August 2018 / Published: 4 September 2018
(This article belongs to the Special Issue Novel Advances in Optical Micro- and Nano-Cavities)
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Abstract

The development of an efficient silicon-based nanolight source is an important step for silicon-based photonic integrated circuits. We propose a high quality factor photonic crystal nanocavity consisting of silicon and silica, which can be used as a silicon-compatible nanolight source. We show that this cavity can effectively confine lights in a low-index silica layer with a high confinement factor of 0.25, in which rare-earth dopants can be embedded as gain materials. The cavity is optimized to have a high quality factor of 15,000 and a mode volume of 0.01 μm3, while the resonance has a wavelength of 1537 nm. We expect that the high confinement factor in the thin silica layer and the high quality factor of the proposed cavity enable the cavity to be a good candidate for silicon-compatible nanolight sources for use in nanolasers or light-emitting diodes in the telecommunication wavelength region. View Full-Text
Keywords: photonic crystals; cavity; Purcell factor; slot mode photonic crystals; cavity; Purcell factor; slot mode
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Kim, Y.; Lee, Y.J.; Hong, S.; Moon, K.; Kwon, S.-H. Photonic Crystal Cavity with a Thin Low-Index Layer for Silicon-Compatible Nanolight Source. Appl. Sci. 2018, 8, 1552.

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