Intra- and Interlayer Electron-Phonon Interactions in 12/12C and 12/13C BiLayer Graphene
AbstractThis review focuses on intra- and interlayer (IL) electron-phonon interactions and phonon self-energy renormalizations in twisted and AB-stacked bilayer graphene (2LG) composed either only of 12C or a mixing of 12C and 13C isotopes. A simple way to imagine a 2LG is by placing one monolayer graphene (1LG) on top of another 1LG. The orientation of one of the layers with relation to the other may originate a twisted 2LG system (known as turbostratic) as well as a AB-stacked system, also known as Bernal stacking. By rotating the layers of a 2LG one can departure from a fully misoriented system to achieve the AB-stacked configuration and their IL interactions can be dramatically different being close to zero in a fully misoriented system and maximum in an AB-stacked system. Interlayer interactions are expected to slightly perturb the intralayer phonons and they also govern the low-energy electronic and vibrational properties, which are of primary importance to phenomena such as transport, infrared (IR) optics and telecommunication bands in the IR range. Therefore, a comprehensive discussion combining intra- and interlayer phenomena is necessary and addressed throughout the text. View Full-Text
Scifeed alert for new publicationsNever miss any articles matching your research from any publisher
- Get alerts for new papers matching your research
- Find out the new papers from selected authors
- Updated daily for 49'000+ journals and 6000+ publishers
- Define your Scifeed now
Mafra, D.L.; Araujo, P.T. Intra- and Interlayer Electron-Phonon Interactions in 12/12C and 12/13C BiLayer Graphene. Appl. Sci. 2014, 4, 207-239.
Mafra DL, Araujo PT. Intra- and Interlayer Electron-Phonon Interactions in 12/12C and 12/13C BiLayer Graphene. Applied Sciences. 2014; 4(2):207-239.Chicago/Turabian Style
Mafra, Daniela L.; Araujo, Paulo T. 2014. "Intra- and Interlayer Electron-Phonon Interactions in 12/12C and 12/13C BiLayer Graphene." Appl. Sci. 4, no. 2: 207-239.