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Metals 2015, 5(2), 910-919; doi:10.3390/met5020910

Epitaxial Growth of Hard Ferrimagnetic Mn3Ge Film on Rhodium Buffer Layer

WPI-Advanced Institute for Materials Research, Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan
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Academic Editor: Jordi Sort Vinas
Received: 23 April 2015 / Revised: 15 May 2015 / Accepted: 21 May 2015 / Published: 2 June 2015
(This article belongs to the Special Issue Manganese-based Permanent Magnets)
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Abstract

Mn\(_3\)Ge has a tetragonal Heusler-like D0\(_{22}\) crystal structure, exhibiting a large uniaxial magnetic anisotropy and small saturation magnetization due to its ferrimagnetic spin structure; thus, it is a hard ferrimagnet. In this report, epitaxial growth of a Mn\(_3\)Ge film on a Rh buffer layer was investigated for comparison with that of a film on a Cr buffer layer in terms of the lattice mismatch between Mn\(_3\)Ge and the buffer layer. The film grown on Rh had much better crystalline quality than that grown on Cr, which can be attributed to the small lattice mismatch. Epitaxial films of Mn\(_3\)Ge on Rh show somewhat small coercivity (\(H_{\rm c}\) = 12.6 kOe) and a large perpendicular magnetic anisotropy (\(K_{\rm u}\) = 11.6 Merg/cm\(^3\)), comparable to that of the film grown on Cr. View Full-Text
Keywords: spintronics; hard magnetic materials; epitaxial film; magnetic properties; high coercivity spintronics; hard magnetic materials; epitaxial film; magnetic properties; high coercivity
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Sugihara, A.; Suzuki, K.; Miyazaki, T.; Mizukami, S. Epitaxial Growth of Hard Ferrimagnetic Mn3Ge Film on Rhodium Buffer Layer. Metals 2015, 5, 910-919.

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