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Crystals 2018, 8(3), 133; https://doi.org/10.3390/cryst8030133

Dislocation Structures in Low-Angle Grain Boundaries of α-Al2O3

1
Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
2
Department of Materials Physics, Nagoya University, Furo-chou, Chikusa-ku, Nagoya, Aichi 464-8603, Japan
3
Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1, Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587, Japan
4
Center for Elements Strategy Initiative for Structure Materials, Kyoto University, Yoshidahonmachi, Sakyo-ku, Kyoto 606-8501, Japan
*
Author to whom correspondence should be addressed.
Received: 14 February 2018 / Revised: 6 March 2018 / Accepted: 7 March 2018 / Published: 12 March 2018
(This article belongs to the Special Issue Crystal Dislocations: Their Impact on Physical Properties of Crystals)
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Abstract

Alumina (α-Al2O3) is one of the representative high-temperature structural materials. Dislocations in alumina play an important role in its plastic deformation, and they have attracted much attention for many years. However, little is known about their core atomic structures, with a few exceptions, because of lack of experimental observations at the atomic level. Low-angle grain boundaries are known to consist of an array of dislocations, and they are useful to compose dislocation structures. So far, we have systematically fabricated several types of alumina bicrystals with a low-angle grain boundary and characterized the dislocation structures by transmission electron microscopy (TEM). Here, we review the dislocation structures in { 11 2 ¯ 0 } / [ 0001 ] , { 11 2 ¯ 0 } / 1 1 ¯ 00 , { 1 1 ¯ 00 } / 11 2 ¯ 0 , ( 0001 ) / 1 1 ¯ 00 , { 1 ¯ 104 } / 11 2 ¯ 0 , and ( 0001 ) / [ 0001 ] low-angle grain boundaries of alumina. Our observations revealed the core atomic structures of b = 1 / 3 11 2 ¯ 0 edge and screw dislocations, 1 1 ¯ 00 edge dislocation, and 1 / 3 1 ¯ 101 edge and mixed dislocations. Moreover, the stacking faults on { 11 2 ¯ 0 } , { 1 1 ¯ 00 } , and ( 0001 ) planes formed due to the dissociation reaction of the dislocations are discussed, focusing on their atomic structure and formation energy. View Full-Text
Keywords: alumina; sapphire; dislocations; low-angle grain boundaries; stacking faults; transmission electron microscopy alumina; sapphire; dislocations; low-angle grain boundaries; stacking faults; transmission electron microscopy
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Tochigi, E.; Nakamura, A.; Shibata, N.; Ikuhara, Y. Dislocation Structures in Low-Angle Grain Boundaries of α-Al2O3. Crystals 2018, 8, 133.

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