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Crystals 2017, 7(8), 239; doi:10.3390/cryst7080239

Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited

Institute of Automation and Electrometry, Siberian Branch of the Russian Academy of Sciences, Koptyug ave., 1, 630090 Novosibirsk, Russia
Department of Physics, Novosibirsk State University, 630090 Novosibirsk, Russia
Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, Koptyug ave., 3, 630090 Novosibirsk, Russia
Author to whom correspondence should be addressed.
Received: 30 June 2017 / Revised: 25 July 2017 / Accepted: 28 July 2017 / Published: 31 July 2017
(This article belongs to the Special Issue Diamond Crystals)
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The results of a high-resolution Raman scattering study of a diamond crystal with a high content of single substitutional nitrogen impurities (550 ppm) in the temperature range from 50 to 673 K are presented and compared with the data for defect-free diamond. It is established that the increase of the nitrogen concentration in diamond leads to the temperature-independent increase of the Raman line width. Analysis of the experimental data allows us to conclude that this broadening should be attributed to the defect-induced shortening of the Raman phonon lifetime. We believe that this mechanism is responsible for the increase of the Raman line width caused by most point-like defects in diamond. No pronounced effects of the nitrogen defects on the Raman line position and phonon anharmonicity are observed. View Full-Text
Keywords: diamond; Raman scattering; Raman linewidth; nitrogen defects diamond; Raman scattering; Raman linewidth; nitrogen defects

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Surovtsev, N.V.; Kupriyanov, I.N. Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited. Crystals 2017, 7, 239.

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