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Crystals 2017, 7(5), 119; doi:10.3390/cryst7050119

HPHT Diamond Crystallization in the Mg-Si-C System: Effect of Mg/Si Composition

1
Sobolev Institute of Geology and Mineralogy SB RAS, Koptyug ave. 3, 630090 Novosibirsk, Russia
2
Department of Geology and Geophysics, Novosibirsk State University, Novosibirsk 630090, Russia
*
Authors to whom correspondence should be addressed.
Academic Editor: Helmut Cölfen
Received: 31 March 2017 / Revised: 21 April 2017 / Accepted: 23 April 2017 / Published: 25 April 2017
(This article belongs to the Special Issue Diamond Crystals)
View Full-Text   |   Download PDF [17739 KB, uploaded 25 April 2017]   |  

Abstract

Crystallization of diamond in the Mg-Si-C system has been studied at 7.5 GPa and 1800 °C with the Mg-Si compositions spanning the range from Mg-C to Si-C end-systems. It is found that as Si content of the system increases from 0 to 2 wt %, the degree of the graphite-to-diamond conversion increases from about 50 to 100% and remains at about this level up to 20 wt % Si. A further increase in Si content of the system leads to a decrease in the graphite-to-diamond conversion degree down to complete termination of diamond synthesis at Si content >50 wt %. Depending on the Si content crystallization of diamond, joint crystallization of diamond and silicon carbide and crystallization of silicon carbide only are found to take place. The cubic growth of diamond, typical of the Mg-C system, transforms to the cube-octahedron upon adding 1 wt % Si and then to the octahedron at a Si content of 2 wt % and higher. The crystallized diamonds are studied by a suite of optical spectroscopy techniques and the major characteristics of their defect-and-impurity structure are revealed. The correlations between the Si content of the Mg-Si-C system and the properties of the produced diamond crystals are established. View Full-Text
Keywords: diamond; high pressure high temperature; crystallization; crystal morphology; defects; characterization diamond; high pressure high temperature; crystallization; crystal morphology; defects; characterization
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Palyanov, Y.; Kupriyanov, I.; Borzdov, Y.; Nechaev, D.; Bataleva, Y. HPHT Diamond Crystallization in the Mg-Si-C System: Effect of Mg/Si Composition. Crystals 2017, 7, 119.

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