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Crystals 2017, 7(3), 65; doi:10.3390/cryst7030065

A 130 GHz Electro-Optic Ring Modulator with Double-Layer Graphene

Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
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Academic Editors: Cristina E. Giusca and Helmut Cölfen
Received: 1 January 2017 / Revised: 14 February 2017 / Accepted: 23 February 2017 / Published: 26 February 2017
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Abstract

The optical absorption coefficient of graphene will change after injecting carriers. Based on this principle, a high-speed double-layer graphene electro-optic modulator with a ring resonator structure was designed in this paper. From the numerical simulations, we designed a modulator. Its optical bandwidth is larger than 130 GHz, the switching energy is 0.358 fJ per bit, and the driven voltage is less than 1.2 V. At the same time, the footprint of the proposed modulator is less than 10 microns squared, which makes the process compatible with the Complementary Metal Oxide Semiconductors (CMOS) process. This will provide the possibility for the on-chip integration of the photoelectric device. View Full-Text
Keywords: graphene; electro-optic modulator; ring resonator graphene; electro-optic modulator; ring resonator
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Wu, L.; Liu, H.; Li, J.; Wang, S.; Qu, S.; Dong, L. A 130 GHz Electro-Optic Ring Modulator with Double-Layer Graphene. Crystals 2017, 7, 65.

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