Next Article in Journal
Design and Fabrication Challenges for Millimeter-Scale Three-Dimensional Phononic Crystals
Next Article in Special Issue
Vickers Hardness of Diamond and cBN Single Crystals: AFM Approach
Previous Article in Journal
Galloping Reduction of Transmission Lines by Using Phononic Crystal
Previous Article in Special Issue
Microindentation Hardness of Protein Crystals under Controlled Relative Humidity
Article Menu
Issue 11 (November) cover image

Export Article

Open AccessArticle
Crystals 2017, 7(11), 347; doi:10.3390/cryst7110347

Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon

1
Department of Physics, Durham University, South Road, Durham DH1 3LE, UK
2
Department of Aerospace, Mechanical and Electronic Engineering, I.T. Carlow, Carlow R93 V960, Ireland
3
Straumann GmbH, 79100 Freiburg, Germany
4
University of Freiburg, Kristallographie, Institut für Geo- und Umweltnaturwissenschaften, 79104 Freiburg, Germany
5
CEIT and Tecnun (University of Navarra), Paseo de Manuel Lardizabal 15, San Sebastián 20018, Spain
6
Lortek, Arranomendi kalea 4A, Ordizia 20240, Spain
7
School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
*
Author to whom correspondence should be addressed.
Academic Editor: Ronald W. Armstrong
Received: 10 October 2017 / Revised: 7 November 2017 / Accepted: 8 November 2017 / Published: 14 November 2017
(This article belongs to the Special Issue Crystal Indentation Hardness)
View Full-Text   |   Download PDF [10805 KB, uploaded 14 November 2017]   |  

Abstract

The crack geometry and associated strain field around Berkovich and Vickers indents on silicon have been studied by X-ray diffraction imaging and micro-Raman spectroscopy scanning. The techniques are complementary; the Raman data come from within a few micrometres of the indentation, whereas the X-ray image probes the strain field at a distance of typically tens of micrometres. For example, Raman data provide an explanation for the central contrast feature in the X-ray images of an indent. Strain relaxation from breakout and high temperature annealing are examined and it is demonstrated that millimetre length cracks, similar to those produced by mechanical damage from misaligned handling tools, can be generated in a controlled fashion by indentation within 75 micrometres of the bevel edge of 200 mm diameter wafers. View Full-Text
Keywords: X-ray diffraction imaging; Raman spectroscopy; indentation geometry; plastic deformation; crack generation; plastic deformation strain imaging X-ray diffraction imaging; Raman spectroscopy; indentation geometry; plastic deformation; crack generation; plastic deformation strain imaging
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Tanner, B.K.; Allen, D.; Wittge, J.; Danilewsky, A.N.; Garagorri, J.; Gorostegui-Colinas, E.; Elizalde, M.R.; McNally, P.J. Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon. Crystals 2017, 7, 347.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Crystals EISSN 2073-4352 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top