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Crystals 2017, 7(11), 341; doi:10.3390/cryst7110341

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

1
Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, Voli Ave. 13, 43025 Lutsk, Ukraine
2
Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla and Mefodiya St. 6, 79005 Lviv, Ukraine
3
Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Krzhyzhanivsky St. 3, 03142 Kyiv, Ukraine
4
Institute of Optoelectronics and Measuring Systems, Faculty of Electrical Engineering, Czestochowa University of Technology, Armii Krajowej 17, PL-42-201 Czestochowa, Poland
5
Physics Department, Lesya Ukrainka Eastern European National University, Voli Ave. 13, 43025 Lutsk, Ukraine
6
Institute of Physics, J. Dlugosz University, Armii Krajowej 13/15, PL-42201 Częstochowa, Poland
*
Authors to whom correspondence should be addressed.
Academic Editor: Shujun Zhang
Received: 30 September 2017 / Revised: 2 November 2017 / Accepted: 4 November 2017 / Published: 7 November 2017
(This article belongs to the Section Crystal Engineering)
View Full-Text   |   Download PDF [4665 KB, uploaded 9 November 2017]   |  

Abstract

The studies of the laser operated third order nonlinear optical features of novel TlGaSn2Se6 crystal were done. The main efforts were devoted to a search of a possibility to apply these crystals as laser operated optoelectronic material. For this reason, the third harmonic generation of the Nd:YAG pulse laser 1064 nm as the fundamental beam with varied energy density of up to 200 J/m2 was studied. As a source of laser operated light, we have used the cw laser (532 nm), exciting the material above the energy gap. Additionally, the influence of middle-energy Ar+ ions on the XPS spectra of the TlInSn2Se6 surface has been explored. We have shown that the main contribution of the Se4p states is manifested in the upper part of the valence band of TlInSn2Se6 We have established that for the TlGaSn2Se6 crystal there exists a possibility of variation of the third harmonic generation efficiency using illumination by external continuous wave laser beam. The discovered effect makes it possible to utilize TlGaSn2Se6 crystal in advanced optoelectronic laser operated devices. View Full-Text
Keywords: chalcogenides; crystal structure; electronic structure; XPS; nonlinear optics; photoinduced effects chalcogenides; crystal structure; electronic structure; XPS; nonlinear optics; photoinduced effects
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Parasyuk, O.V.; Babizhetskyy, V.S.; Khyzhun, O.Y.; Levytskyy, V.O.; Kityk, I.V.; Myronchuk, G.L.; Tsisar, O.V.; Piskach, L.V.; Jedryka, J.; Maciag, A.; Piasecki, M. Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators. Crystals 2017, 7, 341.

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