Slurry Injection Schemes on the Extent of Slurry Mixing and Availability during Chemical Mechanical Planarization
AbstractIn this study, slurry availability and the extent of the slurry mixing (i.e., among fresh slurry, spent slurry, and residual rinse-water) were varied via three different injection schemes. An ultraviolet enhanced fluorescence technique was employed to qualitatively indicate slurry availability and its flow on the pad during polishing. This study investigated standard pad center area slurry application and a slurry injection system (SIS) that covered only the outer half of the wafer track. Results indicated that the radial position of slurry injection and the alteration of fluid mechanics by the SIS played important roles in slurry mixing characteristics and availability atop the pad. Removal rates were found to decrease with slurry availability, while a higher degree of slurry mixing decreased the fraction of fresh slurry and consequently lowered the removal rate. By using a hybrid system (i.e., a combination of slurry injection via SIS and standard pad center slurry application), the polishing process benefited from higher slurry availability and higher fraction of fresh slurry than the conventional pad center slurry application and the shorter SIS, individually. This work underscores the importance of optimum slurry injection geometry and flow for obtaining a more cost-effective and environmentally benign chemical mechanical planarization process. View Full-Text
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Bahr, M.; Sampurno, Y.; Han, R.; Philipossian, A. Slurry Injection Schemes on the Extent of Slurry Mixing and Availability during Chemical Mechanical Planarization. Micromachines 2017, 8, 170.
Bahr M, Sampurno Y, Han R, Philipossian A. Slurry Injection Schemes on the Extent of Slurry Mixing and Availability during Chemical Mechanical Planarization. Micromachines. 2017; 8(6):170.Chicago/Turabian Style
Bahr, Matthew; Sampurno, Yasa; Han, Ruochen; Philipossian, Ara. 2017. "Slurry Injection Schemes on the Extent of Slurry Mixing and Availability during Chemical Mechanical Planarization." Micromachines 8, no. 6: 170.
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