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Micromachines 2017, 8(10), 294; https://doi.org/10.3390/mi8100294

Stress Distribution Profile Imaging With Spectral Fabry-Perot Interferometry in Thin Layer Substrates for Surface Micromachining

School of Mechanical Engineering, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978, Israel
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Received: 21 August 2017 / Revised: 25 September 2017 / Accepted: 27 September 2017 / Published: 30 September 2017
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Abstract

We have used spectral two-layer interferometry (STLI) imaging for estimation of the stress distribution profiles (SDPs) in thin film substrates, enabling fast and reliable all-optical methodology for the evaluation of pre-stress topography profiles in silicon wafers deposited with thin films. Specifically, in polycrystalline silicon (PS) and silicon nitride (SN) thin films, we demonstrate a nondestructive, systematic, and robust capability for consistent stress distribution profile (SDP) evaluation relying on STLI. In particular, for PS and SN devices, the SDP estimation is consistent and is compared with complementary characterization of the films. View Full-Text
Keywords: optomechanics; interference spectroscopy; thin films; local stress evaluation optomechanics; interference spectroscopy; thin films; local stress evaluation
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Inzelberg, A.; Linzon, Y. Stress Distribution Profile Imaging With Spectral Fabry-Perot Interferometry in Thin Layer Substrates for Surface Micromachining. Micromachines 2017, 8, 294.

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