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Micromachines 2017, 8(1), 13; doi:10.3390/mi8010013

Time-Efficient High-Resolution Large-Area Nano-Patterning of Silicon Dioxide

1
Department of Photonics Engineering, Technical University of Denmark, Ørsteds Plads 340, Kongens Lyngby DK-2800, Denmark
2
Gasp Solar ApS, Hovmarken 23, 2640 Hedehusene, Denmark
3
DTU Danchip, Technical University of Denmark, Ørsteds Plads 347, Kongens Lyngby DK-2800, Denmark
*
Author to whom correspondence should be addressed.
Academic Editors: Chang-Hwan Choi, Ishan Wathuthanthri and Ke Du
Received: 31 October 2016 / Revised: 14 December 2016 / Accepted: 26 December 2016 / Published: 4 January 2017
(This article belongs to the Special Issue Scalable Micro/Nano Patterning)
View Full-Text   |   Download PDF [3092 KB, uploaded 4 January 2017]   |  

Abstract

A nano-patterning approach on silicon dioxide (SiO2) material, which could be used for the selective growth of III-V nanowires in photovoltaic applications, is demonstrated. In this process, a silicon (Si) stamp with nanopillar structures was first fabricated using electron-beam lithography (EBL) followed by a dry etching process. Afterwards, the Si stamp was employed in nanoimprint lithography (NIL) assisted with a dry etching process to produce nanoholes on the SiO2 layer. The demonstrated approach has advantages such as a high resolution in nanoscale by EBL and good reproducibility by NIL. In addition, high time efficiency can be realized by one-spot electron-beam exposure in the EBL process combined with NIL for mass production. Furthermore, the one-spot exposure enables the scalability of the nanostructures for different application requirements by tuning only the exposure dose. The size variation of the nanostructures resulting from exposure parameters in EBL, the pattern transfer during nanoimprint in NIL, and subsequent etching processes of SiO2 were also studied quantitatively. By this method, a hexagonal arranged hole array in SiO2 with a hole diameter ranging from 45 to 75 nm and a pitch of 600 nm was demonstrated on a four-inch wafer. View Full-Text
Keywords: electron-beam lithography; nanoimprint lithography; nano-patterning of silicon dioxide electron-beam lithography; nanoimprint lithography; nano-patterning of silicon dioxide
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Lin, L.; Ou, Y.; Aagesen, M.; Jensen, F.; Herstrøm, B.; Ou, H. Time-Efficient High-Resolution Large-Area Nano-Patterning of Silicon Dioxide. Micromachines 2017, 8, 13.

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