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Micromachines 2016, 7(9), 151; doi:10.3390/mi7090151

Investigation of Antireflection Nb2O5 Thin Films by the Sputtering Method under Different Deposition Parameters

1
Department of Electrical Engineering, Kun-Shan University, Tainan 710, Taiwan
2
Department of Mechanical Engineering, National Kaohsiung University of Applied Science, Kaohsiung 807, Taiwan
3
School of Information Engineering, Jimei University, Xiamen 361021, China
4
Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editors: Teen-Hang Meen, Shoou-Jinn Chang, Stephen D. Prior and Artde Donald Kin-Tak Lam
Received: 11 July 2016 / Revised: 23 August 2016 / Accepted: 24 August 2016 / Published: 1 September 2016
View Full-Text   |   Download PDF [1861 KB, uploaded 1 September 2016]   |  

Abstract

In this study, Nb2O5 ceramic was used as the target to deposit the Nb2O5 thin films on glass substrates with the radio frequency (RF) magnetron sputtering method. Different deposition temperatures and O2 ratios were used as parameters to investigate the optical properties of Nb2O5 thin films. The deposition parameters were a pressure of 5 × 10−3 Torr, a deposition power of 100 W, a deposition time of 30 min, an O2 ratio (O2/(O2 + Ar), in sccm) of 10% and 20%, and deposition temperatures of room temperature (RT), 200, 300 and 400 °C, respectively. We found that even if the deposition temperature was 400 °C, the deposited Nb2O5 thin films revealed an amorphous phase and no crystallization phase was observed. The optical properties of transmittance of Nb2O5 thin films deposited on glass substrates were determined by using a ultraviolet-visible (UV-vis) spectrophotometer (transmittance) and reflectance spectra transmittance (reflectance, refractive index, and extinction coefficient) in the light wavelength range of 250–1000 nm. When the O2 ratio was 10% and the deposition temperature increased from RT to 200 °C, the red-shift was clearly observed in the transmittance curve and the transmission ratio had no apparent change with the increasing deposition temperature. When the O2 ratio was 20%, the red-shift was not observed in the transmittance curve and the transmission ratio apparently decreased with the increasing deposition temperature. The variations in the optical band gap (Eg) values of Nb2O5 thin films were evaluated from the Tauc plot by using the quantity (the photon energy) on the abscissa and the quantity (α)r on the ordinate, where α is the optical absorption coefficient, c is the constant for direct transition, h is Planck’s constant, ν is the frequency of the incident photon, and the exponent r denotes the nature of the transition. As the O2 ratio of 10% or 20% was used as the deposition atmosphere, the measured Eg values decreased with the increase of the deposition temperature. The reflectance ratio, extinction coefficient, and refractive index curves of Nb2O5 thin films were also investigated in this study. We would show that those results were influenced by the deposition temperature and O2 ratio. View Full-Text
Keywords: Nb2O5 thin films; anti-reflection; deposition temperature; transmittance; optical band gap Nb2O5 thin films; anti-reflection; deposition temperature; transmittance; optical band gap
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MDPI and ACS Style

Chen, K.-N.; Hsu, C.-M.; Liu, J.; Liou, Y.-C.; Yang, C.-F. Investigation of Antireflection Nb2O5 Thin Films by the Sputtering Method under Different Deposition Parameters. Micromachines 2016, 7, 151.

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