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Micromachines 2016, 7(2), 30; doi:10.3390/mi7020030

CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain
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Academic Editor: Ching-Liang Dai
Received: 21 December 2015 / Revised: 21 January 2016 / Accepted: 2 February 2016 / Published: 15 February 2016
(This article belongs to the Special Issue CMOS-MEMS Sensors and Devices)
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Abstract

This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good ION/IOFF (103) ratio, abrupt subthreshold swing (4.3 mV/decade) and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm). With these dimensions, the operable Cell area of the switch will be 3.5 μm (length) × 0.2 μm (100 nm width + 100 nm gap) = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach. View Full-Text
Keywords: CMOS-NEMS; NEMS; NEMS switch; copper switch CMOS-NEMS; NEMS; NEMS switch; copper switch
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Muñoz-Gamarra, J.L.; Uranga, A.; Barniol, N. CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology. Micromachines 2016, 7, 30.

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