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Micromachines 2016, 7(10), 193; doi:10.3390/mi7100193

A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems

1
Center of Microperipheric Technologies, Fraunhofer Institute IZM, Berlin 13355, Germany
2
University of Applied Sciences, FB I, Microsystems Engineering, Berlin 12459, Germany
3
Microsensor and Actuator Technology, Technical University Berlin, Berlin 10623, Germany
*
Author to whom correspondence should be addressed.
Academic Editor: Nam-Trung Nguyen
Received: 29 July 2016 / Revised: 26 September 2016 / Accepted: 6 October 2016 / Published: 20 October 2016
(This article belongs to the Special Issue SiC-Based Microsystems)
View Full-Text   |   Download PDF [1987 KB, uploaded 20 October 2016]   |  

Abstract

In this paper, we present and discuss our new WSi–WSiN–Pt metallization scheme for SiC-based microsystems for applications in harsh environments. Stoichiometric material WSi was selected as contact material for SiC. The diffusion barrier material WSiN was deposited from the same target as the contact material in order to limit the number of different chemical elements in the scheme. Our scheme was kept as simple as possible regarding the number of layers and chemical elements. Our scheme shows very good long-term stability and suitability for SiC-based microsystems. The experimental evaluation concept used here includes a combination of physical, electrical, and mechanical analysis techniques. This combined advance is necessary since modern physical analysis techniques still offer only limited sensitivity for detecting minimal changes in the metallization scheme. View Full-Text
Keywords: microelectromechanical system (MEMS); SiC-based microsystems; sensors for harsh environment; sensors for high temperature microelectromechanical system (MEMS); SiC-based microsystems; sensors for harsh environment; sensors for high temperature
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Ngo, H.-D.; Mukhopadhyay, B.; Mackowiak, P.; Kröhnert, K.; Ehrmann, O.; Lang, K.-D. A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems. Micromachines 2016, 7, 193.

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