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Micromachines 2015, 6(10), 1569-1576; doi:10.3390/mi6101440

A Surface Micromachined CMOS MEMS Humidity Sensor

Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China
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Author to whom correspondence should be addressed.
Academic Editor: Ching-Liang Dai
Received: 31 August 2015 / Revised: 24 September 2015 / Accepted: 12 October 2015 / Published: 16 October 2015
(This article belongs to the Special Issue CMOS-MEMS Sensors and Devices)
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Abstract

This paper reports a CMOS MEMS (complementary metal oxide semiconductor micro electromechanical system) piezoresistive humidity sensor fabricated by a surface micromachining process. Both pre-CMOS and post-CMOS technologies were used to fabricate the piezoresistive humidity sensor. Compared with a bulk micromachined humidity sensor, the machining precision and the sizes of the surface micromachined humidity sensor were both improved. The package and test systems of the sensor were designed. According to the test results, the sensitivity of the sensor was 7 mV/%RH (relative humidity) and the linearity of the sensor was 1.9% at 20 °C. Both the sensitivity and linearity were not sensitive to the temperature but the curve of the output voltage shifted with the temperature. The hysteresis of the humidity sensor decreased from 3.2% RH to 1.9% RH as the temperature increased from 10 to 40 °C. The recovery time of the sensor was 85 s at room temperature (25 °C). View Full-Text
Keywords: microcantilever; humidity sensor; silicon epitaxy; pre-CMOS; post CMOS microcantilever; humidity sensor; silicon epitaxy; pre-CMOS; post CMOS
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Huang, J.-Q.; Li, F.; Zhao, M.; Wang, K. A Surface Micromachined CMOS MEMS Humidity Sensor. Micromachines 2015, 6, 1569-1576.

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