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Materials 2016, 9(8), 623; doi:10.3390/ma9080623

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

1
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China
2
School of Materials Science and Engineering, Chongqing University of Technology, Chongqing 400054, China
3
State Key Laboratory of New Ceramic and Fine Processing, Tsinghua University, Beijing 100084, China
*
Authors to whom correspondence should be addressed.
Academic Editor: Federico Bella
Received: 30 May 2016 / Revised: 5 July 2016 / Accepted: 12 July 2016 / Published: 27 July 2016
(This article belongs to the Section Advanced Composites)
View Full-Text   |   Download PDF [2312 KB, uploaded 27 July 2016]   |  

Abstract

We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm 2 ·V 1 ·s 1 a turn-on voltage of −0.8 V and a low subthreshold swing of 0.47 V/decade. Cu diffusion is suppressed because pre-annealing can protect a-IGZO from damage during the electrode sputtering and reduce the copper diffusion paths by making film denser. Due to the interaction of Cr with a-IGZO, the carrier concentration of a-IGZO, which is responsible for high mobility, rises. View Full-Text
Keywords: interfaces; semiconductors; a-IGZO; Cu-Cr; TFTs; electrodes interfaces; semiconductors; a-IGZO; Cu-Cr; TFTs; electrodes
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Hu, S.; Fang, Z.; Ning, H.; Tao, R.; Liu, X.; Zeng, Y.; Yao, R.; Huang, F.; Li, Z.; Xu, M.; Wang, L.; Lan, L.; Peng, J. Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs. Materials 2016, 9, 623.

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