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Materials 2016, 9(7), 545; doi:10.3390/ma9070545

Tailoring the Dielectric Layer Structure for Enhanced Performance of Organic Field-Effect Transistors: The Use of a Sandwiched Polar Dielectric Layer

1
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China
2
Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China
*
Authors to whom correspondence should be addressed.
Academic Editor: Giorgio Biasiol
Received: 15 April 2016 / Revised: 22 May 2016 / Accepted: 1 July 2016 / Published: 7 July 2016
View Full-Text   |   Download PDF [3046 KB, uploaded 7 July 2016]   |  

Abstract

To investigate the origins of hydroxyl groups in a polymeric dielectric and its applications in organic field-effect transistors (OFETs), a polar polymer layer was inserted between two polymethyl methacrylate (PMMA) dielectric layers, and its effect on the performance as an organic field-effect transistor (OFET) was studied. The OFETs with a sandwiched dielectric layer of poly(vinyl alcohol) (PVA) or poly(4-vinylphenol) (PVP) containing hydroxyl groups had shown enhanced characteristics compared to those with only PMMA layers. The field-effect mobility had been raised more than 10 times in n-type devices (three times in the p-type one), and the threshold voltage had been lowered almost eight times in p-type devices (two times in the n-type). The on-off ratio of two kinds of devices had been enhanced by almost two orders of magnitude. This was attributed to the orientation of hydroxyl groups from disordered to perpendicular to the substrate under gate-applied voltage bias, and additional charges would be induced by this polarization at the interface between the semiconductor and dielectrics, contributing to the accumulation of charge transfer. View Full-Text
Keywords: organic field-effect transistors (OFETs); dielectric/semiconductor interface; polar dielectric material; hydroxyl group organic field-effect transistors (OFETs); dielectric/semiconductor interface; polar dielectric material; hydroxyl group
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Han, S.; Yang, X.; Zhuang, X.; Yu, J.; Li, L. Tailoring the Dielectric Layer Structure for Enhanced Performance of Organic Field-Effect Transistors: The Use of a Sandwiched Polar Dielectric Layer. Materials 2016, 9, 545.

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