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Materials 2016, 9(7), 534; doi:10.3390/ma9070534

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

1
Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan
2
Department of Electronic Engineering, Kao Yuan University, Kaohsiung 82151, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Mady Elbahri
Received: 24 March 2016 / Revised: 15 June 2016 / Accepted: 24 June 2016 / Published: 30 June 2016
(This article belongs to the Special Issue Green Nanotechnology)
View Full-Text   |   Download PDF [4895 KB, uploaded 30 June 2016]   |  

Abstract

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current−voltage (I−V) measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions. View Full-Text
Keywords: silicon nanowire; indium tin oxide; indium zinc oxide; heterojunction diode silicon nanowire; indium tin oxide; indium zinc oxide; heterojunction diode
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Chang, W.-C.; Su, S.-C.; Wu, C.-C. The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode. Materials 2016, 9, 534.

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