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Materials 2016, 9(7), 511; doi:10.3390/ma9070511

Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography

Université de Sherbrooke, Laboratoire Nanotechnologies Nanosystèmes (LN2)–CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Sherbrooke, QC J1K OA5, Canada
King Saud University, Department of Physics & Astronomy, College of Sciences, Riyadh 11451, Saudi Arabia
Author to whom correspondence should be addressed.
Academic Editor: Jose Luis Capelo
Received: 1 April 2016 / Revised: 26 May 2016 / Accepted: 17 June 2016 / Published: 24 June 2016
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We report on Chemical Beam Epitaxy (CBE) growth of wavelength tunable InAs/GaAs quantum dots (QD) based superluminescent diode’s active layer suitable for Optical Coherence Tomography (OCT). The In-flush technique has been employed to fabricate QD with controllable heights, from 5 nm down to 2 nm, allowing a tunable emission band over 160 nm. The emission wavelength blueshift has been ensured by reducing both dots’ height and composition. A structure containing four vertically stacked height-engineered QDs have been fabricated, showing a room temperature broad emission band centered at 1.1 µm. The buried QD layers remain insensitive to the In-flush process of the subsequent layers, testifying the reliability of the process for broadband light sources required for high axial resolution OCT imaging. View Full-Text
Keywords: InAs quantum dots; In-flush; chemical beam epitaxy; SLD; OCT InAs quantum dots; In-flush; chemical beam epitaxy; SLD; OCT

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Ilahi, B.; Zribi, J.; Guillotte, M.; Arès, R.; Aimez, V.; Morris, D. Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography. Materials 2016, 9, 511.

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