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Materials 2016, 9(4), 241; doi:10.3390/ma9040241

Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe2 Film during Selenization in Se+SnSe Vapor

1
Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 300071, China
2
Department of Electronic Engineering, Chang Gung University, Taoyuan City 33302, Taiwan
*
Authors to whom correspondence should be addressed.
Academic Editor: Christof Schneider
Received: 14 January 2016 / Revised: 25 February 2016 / Accepted: 22 March 2016 / Published: 29 March 2016
(This article belongs to the Section Energy Materials)
View Full-Text   |   Download PDF [4209 KB, uploaded 29 March 2016]   |  

Abstract

The preparation of Cu2ZnSnSe4 (CZTSe) thin films by the selenization of an electrodeposited copper–tin–zinc (CuSnZn) precursor with various Sn contents in low-pressure Se+SnSex vapor was studied. Scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) measurements revealed that the Sn content of the precursor that is used in selenization in a low-pressure Se+SnSex vapor atmosphere only slightly affects the elemental composition of the formed CZTSe films. However, the Sn content of the precursor significantly affects the grain size and surface morphology of CZTSe films. A metal precursor with a very Sn-poor composition produces CZTSe films with large grains and a rough surface, while a metal precursor with a very Sn-rich composition procures CZTSe films with small grains and a compact surface. X-ray diffraction (XRD) and SEM revealed that the metal precursor with a Sn-rich composition can grow a thicker MoSe2 thin film at CZTSe/Mo interface than one with a Sn-poor composition, possibly because excess Sn in the precursor may catalyze the formation of MoSe2 thin film. A CZTSe solar cell with an efficiency of 7.94%was realized by using an electrodeposited metal precursor with a Sn/Cu ratio of 0.5 in selenization in a low-pressure Se+SnSex vapor. View Full-Text
Keywords: Cu2ZnSnSe4 solar cells; selenization; electrodeposited CuSnZn precursor; MoSe2; Se+SnSex vapor Cu2ZnSnSe4 solar cells; selenization; electrodeposited CuSnZn precursor; MoSe2; Se+SnSex vapor
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Yao, L.; Ao, J.; Jeng, M.-J.; Bi, J.; Gao, S.; Sun, G.; He, Q.; Zhou, Z.; Sun, Y.; Chang, L.-B. Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe2 Film during Selenization in Se+SnSe Vapor. Materials 2016, 9, 241.

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