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Materials 2016, 9(11), 953; doi:10.3390/ma9110953

Recording Characteristics, Microstructure, and Crystallization Kinetics of Ge/GeCu Recording Film Used for Write-Once Blu-Ray Disc

1
Department of Materials Science and Engineering, Da-Yeh University, Changhua 515, Taiwan
2
Department of Industrial Engineering and Management, Da-Yeh University, Changhua 515, Taiwan
3
Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 320, Taiwan
4
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
5
CMC Magnetics Corporation, Taoyuan 333, Taiwan
6
Department of Computer and Communication, SHU-TE University, Kaohsiung 824, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Yue-Jing He
Received: 15 September 2016 / Revised: 15 November 2016 / Accepted: 16 November 2016 / Published: 23 November 2016
(This article belongs to the Special Issue Selected Papers from IS3C2016)
View Full-Text   |   Download PDF [2108 KB, uploaded 23 November 2016]   |  

Abstract

A Ge67Cu33 (16 nm) layer and a Ge (3 nm)/Ge67Cu33 (16 nm) bilayer were grown by sputtering at room temperature and used as the recording films for write-once blue laser media. In comparison to the crystallization temperature of Ge in a GeCu film (380.7 °C–405.1 °C), the crystallization temperature of Ge in a Ge/GeCu bilayer could be further decreased to 333.7 °C–382.8 °C. The activation energies of Ge crystallization were 3.51 eV ± 0.05 eV and 1.50 eV ± 0.04 eV for the GeCu and the Ge/GeCu films, respectively, indicating that the Ge/GeCu bilayer possesses a higher feasibility in high-speed optical recording applications. Moreover, the lower activation energy would lead to a larger grain size of Ge crystallization in the Ge/GeCu bilayer after the annealing process. Between the as-deposited and the annealed states, the optical contrasts (@ 405 nm) of the GeCu and the Ge/GeCu films were 26.0% and 47.5%, respectively. This reveals that the Ge/GeCu bilayer is more suitable for the recording film of a write-once blu-ray disc (BD-R) in comparison with the GeCu film. Based on the dynamic tests performed for 2× and 4× recording speeds, the optimum jitter values of the BD-R with the Ge/GeCu recording film were 7.4% at 6.3 mW and 7.6% at 8.6 mW, respectively. View Full-Text
Keywords: Ge/GeCu bilayer; write-once blu-ray disc; microstructure; crystallization kinetic; jitter value Ge/GeCu bilayer; write-once blu-ray disc; microstructure; crystallization kinetic; jitter value
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MDPI and ACS Style

Ou, S.-L.; Lai, F.-M.; Wang, W.-K.; Huang, S.-Y.; Sun, A.-C.; Tien, C.-H.; Xu, Z.-J.; Yeh, C.-Y.; Kao, K.-S. Recording Characteristics, Microstructure, and Crystallization Kinetics of Ge/GeCu Recording Film Used for Write-Once Blu-Ray Disc. Materials 2016, 9, 953.

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