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Open AccessFeature PaperCommunication
Materials 2016, 9(11), 935; doi:10.3390/ma9110935

Energy Storage Characteristics of BiFeO3/BaTiO3 Bi-Layers Integrated on Si

1
Key Laboratory for Liquid−Solid Structural Evolution and Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan 250061, China
2
Suzhou Institute of Shandong University, Suzhou 215123, China
3
National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
*
Author to whom correspondence should be addressed.
Academic Editor: Yuhang Ren
Received: 29 September 2016 / Revised: 27 October 2016 / Accepted: 11 November 2016 / Published: 18 November 2016
(This article belongs to the Special Issue Microwave Absorbing and Energy Storage Materials)
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Abstract

BiFeO3/BaTiO3 bi-layer thick films (~1 μm) were deposited on Pt/Ti/SiO2/(100) Si substrates with LaNiO3 buffer layers at 500 °C via a rf magnetron sputtering process. X-ray diffraction (XRD) analysis revealed that both BiFeO3 and BaTiO3 layers have a (00l) preferred orientation. The films showed a small remnant polarization (Pr ~ 7.8 μC/cm2) and a large saturated polarization (Ps ~ 65 μC/cm2), resulting in a slim polarization-electric field (P-E) hysteresis loop with improved energy storage characteristics (Wc = 71 J/cm3, η = 61%). The successful “slim-down” of the P-E loop from that of the pure BiFeO3 film can be attributed to the competing effects of space charges and the interlayer charge coupling on charge transport of the bi-layer film. The accompanying electrical properties of the bi-layer films were measured and the results confirmed their good quality. View Full-Text
Keywords: ferroelectrics; lead-free; energy storage; bilayer; BiFeO3; BaTiO3; Si ferroelectrics; lead-free; energy storage; bilayer; BiFeO3; BaTiO3; Si
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Liu, M.; Zhu, H.; Zhang, Y.; Xue, C.; Ouyang, J. Energy Storage Characteristics of BiFeO3/BaTiO3 Bi-Layers Integrated on Si. Materials 2016, 9, 935.

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