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Materials 2016, 9(1), 6; doi:10.3390/ma9010006

Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy

1
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
2
School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
3
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
*
Authors to whom correspondence should be addressed.
Academic Editor: Jung Ho Je
Received: 27 October 2015 / Revised: 17 December 2015 / Accepted: 18 December 2015 / Published: 23 December 2015
(This article belongs to the Section Structure Analysis and Characterization)
View Full-Text   |   Download PDF [1566 KB, uploaded 23 December 2015]   |  

Abstract

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption (A′) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation. View Full-Text
Keywords: sol-gel oxide; derivative spectroscopy; insulator-to-semiconductor transition sol-gel oxide; derivative spectroscopy; insulator-to-semiconductor transition
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Lee, W.; Choi, S.; Kim, K.T.; Kang, J.; Park, S.K.; Kim, Y.-H. Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy. Materials 2016, 9, 6.

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