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Materials 2015, 8(9), 6471-6481; doi:10.3390/ma8095316

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

1
Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan
2
Materials & Electro-Optics Research Division, Chung-Shan Institute of Science and Technology, Lung Tan 32599, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Giorgio Biasiol
Received: 3 July 2015 / Revised: 15 August 2015 / Accepted: 10 September 2015 / Published: 21 September 2015
(This article belongs to the Section Structure Analysis and Characterization)
View Full-Text   |   Download PDF [1392 KB, uploaded 21 September 2015]   |  

Abstract

: In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 104 Ω/cm), carrier concentration (4.1 × 1021 cm3), carrier mobility (10 cm2/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm3) with a high figure of merit (81.1 × 1031) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices. View Full-Text
Keywords: oxide-related compound; indium tin oxide (ITO); magnetron sputtering; transparent conducting oxide (TCO) oxide-related compound; indium tin oxide (ITO); magnetron sputtering; transparent conducting oxide (TCO)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Pu, N.-W.; Liu, W.-S.; Cheng, H.-M.; Hu, H.-C.; Hsieh, W.-T.; Yu, H.-W.; Liang, S.-C. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film. Materials 2015, 8, 6471-6481.

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