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Materials 2015, 8(9), 5586-5596; doi:10.3390/ma8095263

Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition

1
National Research Center of Engineering Technology for Utilization of Functional Ingredients from Botanicals, Hunan Agriculture University, Changsha 410128, China
2
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
*
Author to whom correspondence should be addressed.
Academic Editor: Nicola Pugno
Received: 28 July 2015 / Revised: 18 August 2015 / Accepted: 19 August 2015 / Published: 26 August 2015
(This article belongs to the Section Structure Analysis and Characterization)
View Full-Text   |   Download PDF [1710 KB, uploaded 26 August 2015]   |  

Abstract

The Si(0001) face and C(000-1) face dependences on growth pressure of epitaxial graphene (EG) grown on 4H-SiC substrates by ethene chemical vapor deposition (CVD) was studied using atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). AFM revealed that EGs on Si-faced substrates had clear stepped morphologies due to surface step bunching. However, This EG formation did not occur on C-faced substrates. It was shown by μ-Raman that the properties of EG on both polar faces were different. EGs on Si-faced substrates were relatively thinner and more uniform than on C-faced substrates at low growth pressure. On the other hand, D band related defects always appeared in EGs on Si-faced substrates, but they did not appear in EG on C-faced substrate at an appropriate growth pressure. This was due to the μ-Raman covering the step edges when measurements were performed on Si-faced substrates. The results of this study are useful for optimized growth of EG on polar surfaces of SiC substrates. View Full-Text
Keywords: face dependences; epitaxial graphene; chemical vapor deposition; 4H-SiC; growth pressure face dependences; epitaxial graphene; chemical vapor deposition; 4H-SiC; growth pressure
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Cai, S.; Liu, Z.; Zhong, N.; Liu, S.; Liu, X. Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition. Materials 2015, 8, 5586-5596.

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