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Journal: Materials, 2015
Volume: 8
Number: 5263

Article: Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition
Authors: by Shuxian Cai, Zhonghua Liu, Ni Zhong, Shengbei Liu and Xingfang Liu
Link: https://www.mdpi.com/1996-1944/8/9/5263

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