Capacitive Behavior of Single Gallium Oxide Nanobelt
AbstractIn this research, monocrystalline gallium oxide (Ga2O3) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga2O3 nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga2O3 nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga2O3 nanobelt, indicating the existence of capacitive elements in the Pt/Ga2O3/Pt structure. View Full-Text
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Cai, H.; Liu, H.; Zhu, H.; Shao, P.; Hou, C. Capacitive Behavior of Single Gallium Oxide Nanobelt. Materials 2015, 8, 5313-5320.
Cai H, Liu H, Zhu H, Shao P, Hou C. Capacitive Behavior of Single Gallium Oxide Nanobelt. Materials. 2015; 8(8):5313-5320.Chicago/Turabian Style
Cai, Haitao; Liu, Hang; Zhu, Huichao; Shao, Pai; Hou, Changmin. 2015. "Capacitive Behavior of Single Gallium Oxide Nanobelt." Materials 8, no. 8: 5313-5320.