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Materials 2015, 8(8), 5313-5320; doi:10.3390/ma8085244

Capacitive Behavior of Single Gallium Oxide Nanobelt

1,✝
,
1,✝
,
1,* , 1
and
2,*
1
School of Electronic Science and Technology, Key Laboratory for Integrated Circuits Technology of Liaoning Province, Dalian University of Technology, Dalian 116024, China
2
State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China
These authors contributed equally to this work.
*
Authors to whom correspondence should be addressed.
Academic Editor: Teen-Hang Meen
Received: 4 June 2015 / Revised: 22 July 2015 / Accepted: 5 August 2015 / Published: 17 August 2015
(This article belongs to the Special Issue Selected Papers from ICASI 2015)
View Full-Text   |   Download PDF [1929 KB, uploaded 17 August 2015]   |  

Abstract

In this research, monocrystalline gallium oxide (Ga2O3) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga2O3 nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga2O3 nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga2O3 nanobelt, indicating the existence of capacitive elements in the Pt/Ga2O3/Pt structure. View Full-Text
Keywords: Ga2O3; nanobelt; capacitive behavior; impedance analysis Ga2O3; nanobelt; capacitive behavior; impedance analysis
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Cai, H.; Liu, H.; Zhu, H.; Shao, P.; Hou, C. Capacitive Behavior of Single Gallium Oxide Nanobelt. Materials 2015, 8, 5313-5320.

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