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Materials 2015, 8(8), 5289-5297; doi:10.3390/ma8085243

Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO2x Thin Films

1
Department of Materials Science and Engineering, National Cheng Kung University, No. 1, University Road, Tainan 701, Taiwan
2
Department of Electrical Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung 833, Taiwan
3
Amity Institute of Nanotechnology, Amity University, Sector 125, Noida, India
4
Department of Chemical and Materials Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Road, Nan-Tzu District, Kaohsiung 811, Taiwan
5
Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan
6
Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan
These authors contributed equally to this work.
*
Author to whom correspondence should be addressed.
Academic Editor: Teen-Hang Meen
Received: 30 June 2015 / Revised: 5 August 2015 / Accepted: 6 August 2015 / Published: 14 August 2015
(This article belongs to the Special Issue Selected Papers from ICASI 2015)
View Full-Text   |   Download PDF [6535 KB, uploaded 14 August 2015]   |  

Abstract

Tin oxide (SnO2—x) thin films were prepared under various flow ratios of O2/(O2 + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O2/(O2 + Ar), chamber pressures and post-annealing treatment on the physical properties of SnO2 thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM). Auger electron spectroscopy (AES) analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor. View Full-Text
Keywords: SnO2; transparent conductive oxide (TCO); oxygen flow ratio; annealing SnO2; transparent conductive oxide (TCO); oxygen flow ratio; annealing
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Wang, C.-M.; Huang, C.-C.; Kuo, J.-C.; Sahu, D.R.; Huang, J.-L. Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO2x Thin Films. Materials 2015, 8, 5289-5297.

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