Synthesis and Thermoelectric Properties in the 2D Ti1 – xNbxS3 Trichalcogenides
AbstractA solid solution of Ti1 − xNbxS3 composition (x = 0, 0.05, 0.07, 0.10) was synthesized by solid-liquid-vapor reaction followed by spark plasma sintering. The obtained compounds crystallize in the monoclinic ZrSe3 structure type. For the x = 0.07 sample, a mixture of both A and B variants of the MX3 structure is evidenced by transmission electron microscopy. This result contrasts with those of pristine TiS3, prepared within the same conditions, which crystallizes as a large majority of A variant. Thermoelectric properties were investigated in the temperature range 323 to 523 K. A decrease in the electrical resistivity and absolute value of the Seebeck coefficient is observed when increasing x due to electron doping. The lattice component of the thermal conductivity is effectively reduced by the Nb for Ti substitution through a mass fluctuation effect and/or a disorder effect created by the mixture of both A and B variants. Due to the low carrier concentration and the semiconductor character of the doped compounds, the too low power factor values leads to ZT values that remain smaller by a factor of 50 than those of the TiS2 layered compound. View Full-Text
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Misse, P.R.N.; Berthebaud, D.; Lebedev, O.I.; Maignan, A.; Guilmeau, E. Synthesis and Thermoelectric Properties in the 2D Ti1 – xNbxS3 Trichalcogenides. Materials 2015, 8, 2514-2522.
Misse PRN, Berthebaud D, Lebedev OI, Maignan A, Guilmeau E. Synthesis and Thermoelectric Properties in the 2D Ti1 – xNbxS3 Trichalcogenides. Materials. 2015; 8(5):2514-2522.Chicago/Turabian Style
Misse, Patrick R.N.; Berthebaud, David; Lebedev, Oleg I.; Maignan, Antoine; Guilmeau, Emmanuel. 2015. "Synthesis and Thermoelectric Properties in the 2D Ti1 – xNbxS3 Trichalcogenides." Materials 8, no. 5: 2514-2522.