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Materials 2015, 8(4), 1993-1999; doi:10.3390/ma8041993

Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate

Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan
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Author to whom correspondence should be addressed.
Academic Editor: Dirk Poelman
Received: 17 February 2015 / Revised: 8 April 2015 / Accepted: 10 April 2015 / Published: 22 April 2015
(This article belongs to the Special Issue Luminescent Materials and Devices)
View Full-Text   |   Download PDF [2029 KB, uploaded 22 April 2015]   |  

Abstract

The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency. View Full-Text
Keywords: GaN-based LED; concave patterned sapphire substrate; crystal quality; light output power GaN-based LED; concave patterned sapphire substrate; crystal quality; light output power
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Wu, Y.S.; Isabel, A.P.S.; Zheng, J.-H.; Lin, B.-W.; Li, J.-H.; Lin, C.-C. Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate. Materials 2015, 8, 1993-1999.

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