Materials 2013, 6(6), 2262-2273; doi:10.3390/ma6062262
Communication

Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

Received: 10 May 2013; in revised form: 27 May 2013 / Accepted: 28 May 2013 / Published: 31 May 2013
(This article belongs to the Special Issue Carbon Nanotubes)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.
Keywords: carbon nanotube; in situ horizontal alignment; plasma enhanced chemical vapor deposition; electric field
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MDPI and ACS Style

Cole, M.T.; Milne, W.I. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes. Materials 2013, 6, 2262-2273.

AMA Style

Cole MT, Milne WI. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes. Materials. 2013; 6(6):2262-2273.

Chicago/Turabian Style

Cole, Matthew T.; Milne, William I. 2013. "Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes." Materials 6, no. 6: 2262-2273.

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